High performance Silicon or InGaAs photodiodes are packaged in compact rugged aluminum housings with an external BNC connector for the output signal. Useful for the detection of fast light signals from 190 nm to 1700 nm. Two models are offered. The IB model (Internal Bias) has an internal bias battery. The EB model (External Bias) has a power jack connector for an external bias. An adjustable filter holder attaches directly to the housing and holds multiple standard 1" diameter filters.

FEATURES
Fast response, low dark currents, low capacitance: can sustain large bandwidths.
Silicon or InGaAs PIN photodetectors.
Internal bias battery or external bias connector.
Filter holder attaches directly to detector housing for convenient removal or addition of filters and diffusers without movement of detector.
One inch diameter colored glass, ND filters, ground glass, and opal glass for the filter holder are available to attenuate or diffuse the input light.
Externally biased (EB) models are useful for viewing a cw source or a continuous mode-locked train which may deplete the battery of the internally biased (IB) model.
..Detector Material Silicon Silicon Silicon InGaAs InGaAs Silicon Silicon
..Active Area (mm sq) 0.13 0.34 0.80 0.005 0.07 20.30 1.00
..Sensitivity@
..830 nm (A/W)
0.40 0.40 0.40 0.50 0.60
..Sensitivity@
..1300 nm (A/W)
0.85 0.85
..Risetime (ns) <0.25 <0.40 <0.50 <0.25 <0.30 <5.00 <0.40
..Falltime (ns) <0.30 <0.50 <0.90 <0.30 <0.40 <10.00 <1.00
..Junction Capacitance (pf) 2.00 4.00 5.50 2.00 7.00 50.00
..Dark Current (nA) 0.02 0.08 0.25 0.50 1.00 25.00 2.00
..Breakdown Voltage (V) 30 30 30 20 20 50 30
..Bias Voltage (V) 6-20 6-20 6-20 6-15 6-15 6-40 6-20